High speed GaAs digital integrated circuits

被引：0

作者：

Oki Electric Co., Ltd, Hachioji-shi, Japan ^{[1
]}

机构：

来源：

IEICE Trans Electron | / 9卷 / 1165-1170期

关键词：

Electric network synthesis - Field effect transistors - Gates (transistor) - Integrated circuit manufacture - Ion implantation - LSI circuits - Optical communication - Refractory metals - Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

High speed GaAs ICs (Integrated Circuits) using FETs (Field Effect Transistors) are reported. As the fabricating techniques, ion implantation processes for both 0.5 μm and 0.2μm gate FETs using W/Al refractory metal and 0.2 μm recessed gate process with MBE grown epitaxial wafers are shown. These fabrication processes are selected depending on the circuit speed and the integration level. The outline of the circuit design and the examples of ICs, which are developed for 10 Gb/s optical communication systems, are also shown with the obtained characteristics.

引用