Chemical and thermal stability of fluorinated amorphous carbon films for interlayer dielectric applications

被引:0
|
作者
Chang, J.P. [1 ]
Krautter, H.W. [1 ]
Zhu, W. [1 ]
Opila, R.L. [1 ]
Pai, C.S. [1 ]
机构
[1] Bell Labs, Lucent Technologies, Murray Hill, NJ 07974, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
12
引用
收藏
页码:117 / 122
相关论文
共 50 条
  • [31] Improvements of characteristics of fluorinated dielectric films integrated as interlayer dielectrics
    Shieh, JM
    Tsai, KC
    Suen, SC
    Dai, BT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1388 - 1393
  • [32] Deposition of fluorinated amorphous carbon thin films as a low-dielectric-constant material
    Han, SS
    Kim, HR
    Bae, BS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (09) : 3383 - 3388
  • [33] Surface modification of low dielectric fluorinated amorphous carbon films by nitrogen plasma treatment
    Yang, SH
    Kim, H
    Park, JW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (10): : 5990 - 5993
  • [34] Modifications of low dielectric constant fluorinated amorphous carbon films by multiple plasma treatments
    Shieh, JM
    Tsai, KC
    Dai, BT
    Lee, SC
    Ying, CH
    Fang, YK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (07) : G384 - G390
  • [35] Relationship between thermal stabilty and optical bandgap of fluorinated amorphous carbon films
    Yang, Shen-Dong
    Ning, Zhao-Yuan
    Huang, Feng
    Cheng, Shan-Hua
    Ye, Chao
    Wuli Xuebao/Acta Physica Sinica, 2002, 51 (06): : 1324 - 1325
  • [36] Relationship between thermal stabilty and optical bandgap of fluorinated amorphous carbon films
    Yang, SD
    Ning, ZY
    Huang, F
    Cheng, SH
    Ye, C
    ACTA PHYSICA SINICA, 2002, 51 (06) : 1321 - 1325
  • [37] Influence of thermal annealing on bonding structure and dielectric properties of fluorinated amorphous carbon film
    Ning, ZY
    Cheng, SH
    Yang, SD
    CURRENT APPLIED PHYSICS, 2002, 2 (06) : 439 - 443
  • [38] Fluorinated amorphous carbon: A low dielectric constant material for multilevel interconnect applications.
    Zhu, W
    Pai, CS
    Bair, HE
    Krautter, HW
    Dennis, BS
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 218 : U629 - U629
  • [39] Low temperature plasma enhanced chemical vapor deposition of fluorinated silicon oxide films as an interlayer dielectric
    Song, JH
    Ajmera, PK
    Lee, GS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (05): : 1843 - 1846
  • [40] Structures and properties of fluorinated amorphous carbon films
    Huang, KP
    Lin, P
    Shih, HC
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 354 - 360