Characterization of vacancy-type defects in Se-implanted GaAs by means of a slow positron beam

被引：0
|
作者：
Fujii, Satoshi
Shikata, Shinichi
Wei, Long
Tanigawa, Shoichiro
机构：
来源：
Journal of Applied Physics | 1992年 / 72卷 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] ELECTRON-MICROSCOPY OF SE-IMPLANTED AND ELECTRON-BEAM ANNEALED GAAS
    SHAH, NJ
    AHMED, H
    FREEMAN, LA
    SMITH, DJ
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (67): : 125 - 130
  • [42] Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams
    Uedono, A.
    Ito, K.
    Nakamori, H.
    Mori, K.
    Nakano, Y.
    Kachi, T.
    Ishibashi, S.
    Ohdaira, T.
    Suzuki, R.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
  • [43] Study of vacancy-type defects after Cu diffusion in GaAs
    Bondarenko, V
    Petters, K
    Krause-Rehberg, R
    Gebauer, J
    Leipner, HS
    PHYSICA B-CONDENSED MATTER, 2001, 308 (308-310) : 792 - 795
  • [44] Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation
    Uedono, Akira
    Tanaka, Ryo
    Takashima, Shinya
    Ueno, Katsunori
    Edo, Masaharu
    Shima, Kohei
    Chichibu, Shigefusa F.
    Uzuhashi, Jun
    Ohkubo, Tadakatsu
    Ishibashi, Shoji
    Sierakowski, Kacper
    Bockowski, Michal
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2024, 261 (05):
  • [45] Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams
    Uedono, Akira
    Takashima, Shinya
    Edo, Masaharu
    Ueno, Katsunori
    Matsuyama, Hideaki
    Egger, Werner
    Koschine, Toenjes
    Hugenschmidt, Christoph
    Dickmann, Marcel
    Kojima, Kazunobu
    Chichibu, Shigefusa F.
    Ishibashi, Shoji
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (04):
  • [46] Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions
    Ohshima, T
    Uedono, A
    Abe, H
    Chen, ZQ
    Itoh, H
    Yoshikawa, M
    Abe, K
    Eryu, O
    Nakashima, K
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 652 - 655
  • [47] Evaluation of vacancy-type defects in ZnO by the positron annihilation lifetime spectroscopy
    R. Ono
    T. Togimitsu
    W. Sato
    Journal of Radioanalytical and Nuclear Chemistry, 2015, 303 : 1223 - 1226
  • [48] DEPTH PROFILE OF VACANCY-TYPE DEFECTS IN B+-IMPLANTED SI WITH A SIO2 OVERLAYER BY A VARIABLE-ENERGY POSITRON BEAM
    UEDONO, A
    TANIGAWA, S
    SUGIURA, J
    OGASAWARA, M
    APPLIED PHYSICS LETTERS, 1988, 53 (01) : 25 - 27
  • [49] Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
    Yang, X. L.
    Zhu, W. X.
    Wang, C. D.
    Fang, H.
    Yu, T. J.
    Yang, Z. J.
    Zhang, G. Y.
    Qin, X. B.
    Yu, R. S.
    Wang, B. Y.
    APPLIED PHYSICS LETTERS, 2009, 94 (15)
  • [50] Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam
    Uedono, Akira
    Siladie, Alexandra-Madalina
    Pernot, Julien
    Daudin, Bruno
    Ishibashi, Shoji
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (17)
12345