Landau theory of asymmetric behaviour in ferroelectric thin films

被引：0
|
作者：
Shandong Univ, Jinan, China [1 ]
机构：
来源：
Solid State Commun | / 8卷 / 559-562期
关键词：
641.1 Thermodynamics - 701.1 Electricity: Basic Concepts and Phenomena - 708.1 Dielectric Materials - 801.4 Physical Chemistry - 921.6 Numerical Methods;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Landau theory of asymmetric behaviour in ferroelectric thin films
    Wang, CL
    Smith, SRP
    SOLID STATE COMMUNICATIONS, 1996, 99 (08) : 559 - 562
  • [2] Landau theory of ferroelectric films with asymmetric behavior
    Wang, CL
    Zhang, L
    Zhong, WL
    Zhang, PL
    FERROELECTRICS, 1999, 229 (1-4) : 27 - 32
  • [3] LANDAU THEORY OF THIN FERROELECTRIC-FILMS
    BRENNAN, C
    INTEGRATED FERROELECTRICS, 1995, 8 (3-4) : 335 - 346
  • [4] THE ROLE OF OPTIMIZATION IN THE LANDAU THEORY OF FERROELECTRIC THIN FILMS
    Webb, J. F.
    POWER CONTROL AND OPTIMIZATION, PROCEEDINGS, 2009, 1159 : 319 - 323
  • [5] Landau theory of asymmetric ferroelectric films under external electric fields
    Shandong Univ, Jinan, China
    Solid State Communications, 1998, 109 (03): : 213 - 216
  • [6] Landau theory of asymmetric ferroelectric films under external electric fields
    Wang, CL
    Zhang, L
    Peng, YP
    Zhong, WL
    Zhang, PL
    Wang, YX
    SOLID STATE COMMUNICATIONS, 1999, 109 (03) : 213 - 216
  • [7] A simplified treatment of the Landau theory of phase transitions for thin ferroelectric films
    Wong, C. K.
    Shin, F. G.
    AMERICAN JOURNAL OF PHYSICS, 2008, 76 (01) : 31 - 38
  • [8] Landau Theory of Ferroelectric Thin Films and its Relevance to RF Filter Design
    Webb, Jeffrey F.
    APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 3388 - 3391
  • [9] Simulation of thickness effect in thin ferroelectric films using Landau-Khalatnikov theory
    Lo, VC
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) : 3353 - 3359
  • [10] On the theory of thin ferroelectric films
    Wesselinowa, JM
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 223 (03): : 737 - 743
12345