Electronic structure of the Be acceptor centers in 6H-SiC

被引：0

作者：

Van Duijn-Arnold, A. ^{[1
]}

Schmidt, J. ^{[1
]}

Poluektov, O.G. ^{[2
]}

Baranov, P.G. ^{[3
]}

Mokhov, E.N. ^{[3
]}

机构：

[1] Ctr. Stud. Excited States Molecules, Leiden University, NL-2300 RA Leiden, Netherlands

[2] Institute of Chemical Physics, Russian Academy of Sciences, RU- Moscow, Russia

[3] A.F. Ioffe Phys.-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, RU-194021 St.-Petersburg, Russia

来源：

Materials Science Forum | 2000年 / 338卷

关键词：

Beryllium - Electronic structure - Semiconductor doping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this paper we present an overview of the different shallow and deep acceptor centers in 9Be-doped 6H-SiC. The g-, hyperfine and quadrupole tensors of up to eight different centers are identified. Their geometric and electronic structure resembles that of the B-related centers in 6H-SiC. Three of them showed the behavior characteristic of shallow B centers (sB), five of them that of deep centers (dB). Two of the deep centers have not been found in B-doped 6H-SiC.

引用

共 50 条

[1] Electronic structure of the Be acceptor centers in 6H-SiC
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