共 50 条
- [1] Reaction of ozone and H2O2 in NH4OH solutions and their reaction with silicon wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (6A): : 3335 - 3339
- [2] The reaction of ozone and H2O2 in ammonium hydroxide (NH4OH) solutions and their reaction with silicon wafers CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING, 2000, 99 (36): : 288 - 295
- [4] ETCHING OF THERMALLY GROWN SIO2 BY NH4OH IN MIXTURE OF NH4OH AND H2O2 CLEANING SOLUTION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7A): : 4080 - 4085
- [5] Etching of thermally grown SiO2 by NH4OH in mixture of NH4OH and H2O2 cleaning solution Kaigawa, Hiroyuki, 1600, JJAP, Minato-ku, Japan (33):
- [6] Analysis of atomic force microscopy images of crystal originated "particles" on silicon wafers treated with NH4OH:H2O2: H2O solution JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (01): : 18 - 23
- [7] THE RELATIONSHIP OF THE SILICON SURFACE-ROUGHNESS AND GATE OXIDE INTEGRITY IN NH4OH/H2O2 MIXTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (11A): : L1514 - L1517
- [9] CHEMICAL TREATMENT EFFECTS OF SI SURFACES IN NH4OH H2O2 H2O SOLUTIONS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (9A): : L1189 - L1191
- [10] Chemical treatment effects of Si surfaces in NH4OH:H2O2:H2O solutions studied by spectroscopic ellipsometry Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (9 A):