Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+ nn+ structures

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作者：
Ortolland, S.
Raynaud, C.
Chante, J.P.
Locatelli, M.L.
Lebedev, A.A.
Andreev, A.N.
Savkina, N.S.
Chelnokov, V.E.
Rastegaeva, M.G.
Syrkin, A.L.
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| 1996年 / 80期
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