Annealing of radiation and electrostatic-discharge damages in semiconductor devices

被引：0

|

作者：

Gorlov, M.I.

Litvinenko, D.A.

机构：

来源：

Mikroelektronika | 2002年 / 31卷 / 05期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

页码：350 / 361

相关论文

共 50 条

[1] Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices
Gorlov M.I.
Litvinenko D.A.
Russian Microelectronics, 2002, 31 (5) : 295 - 304
[2] Effect of electrostatic discharge on semiconductor devices and subsequent annealing of electrostatic defects
M. I. Gorlov
I. V. Vorontsov
A. V. Andreev
Measurement Techniques, 1998, 41 : 65 - 67
[3] Effect of electrostatic discharge on semiconductor devices and subsequent annealing of electrostatic defects
Gorlov, MI
Vorontsov, IV
Andreev, AV
MEASUREMENT TECHNIQUES, 1998, 41 (01) : 65 - 67
[4] ELECTROSTATIC-DISCHARGE DETECTORS
SCHRIMPF, RD
HSUEH, PWC
LENDENMANN, H
FORDEMWALT, JN
ELECTRICAL OVERSTRESS / ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS 1989, 1989, : 84 - 87
[5] Electrostatic discharge in semiconductor devices: An overview
Vinson, JE
Liou, JJ
PROCEEDINGS OF THE IEEE, 1998, 86 (02) : 399 - 418
[6] ELECTROSTATIC-DISCHARGE COUPLING IN SPACECRAFT ELECTRONICS
GRANGER, JP
FERRANTE, JG
ESA JOURNAL-EUROPEAN SPACE AGENCY, 1987, 11 (01): : 19 - 30
[7] THE ELECTROSTATIC-DISCHARGE PHENOMENA ON MARECS-A
CAPART, JJ
DUMESNIL, JJ
ESA BULLETIN-EUROPEAN SPACE AGENCY, 1983, (34) : 22 - 27
[8] Prolog to electrostatic discharge in semiconductor devices: An overview
Esch, J
PROCEEDINGS OF THE IEEE, 1998, 86 (02) : 397 - 398
[9] Electrostatic discharge in semiconductor devices: Protection techniques
Vinson, JE
Liou, JJ
PROCEEDINGS OF THE IEEE, 2000, 88 (12) : 1878 - 1900
[10] DESIGN FOR ELECTROSTATIC-DISCHARGE (ESD) PROTECTION IN TELECOMMUNICATIONS PRODUCTS
WELSHER, TL
BLONDIN, TJ
DANGELMAYER, GT
SMOOHA, Y
AT&T TECHNICAL JOURNAL, 1990, 69 (03): : 77 - 96

← 1 2 3 4 5 →