Vacuum ultraviolet laser-induced surface alteration of SiO2

被引：0

作者：

Kurosawa, Kou ^{[1
]}

Takigawa, Yasuo ^{[1
]}

Sasaki, Wataru ^{[1
]}

Katto, Masahito ^{[1
]}

Inoue, Yoshihide ^{[1
]}

机构：

[1] Univ of Miyazaki, Miyozaki, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 11 B期

关键词：

Lasers; Excimer - Applications - Microelectronics - Semiconducting silicon - Ultraviolet radiation;

D O I：

10.1143/jjap.30.3219

中图分类号：

学科分类号：

摘要：

Intense vacuum ultraviolet laser radiation is generated from rare gas excimer lasers, 9.8 eV photons from an argon excimer laser change surfaces of SiO2 to silicon. The reaction proceeds without the aid of reactive gas or solution and is thus called the 'superdry process', 9.8 eV photons create excitons via an efficient one-photon absorption process, and then these high-density excitons induced bond-breaking between Si and O.

引用

页码：3219 / 3222