ELECTRONIC BAND STRUCTURE AND FERMI SURFACE OF YTTERBIUM UNDER HIGH PRESSURE.

被引：0

作者：

Sankar, Sambasivam ^{[1
]}

Iyakutti, Kombiahthevar ^{[1
]}

Dakshinamoorthy, Mamundi ^{[1
]}

机构：

[1] Univ of Madras, Madras, India, Univ of Madras, Madras, India

来源：

High Temperatures - High Pressures | 1986年 / 18卷 / 04期

关键词：

BAND STRUCTURE;

D O I：

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学科分类号：

摘要：

The energy band structure of fcc ytterbium has been calculated by the relativistic augmented plane wave method for a wide range of pressures by reduction of the unit cell volume between 1. 0 V//0 to 0. 5 V//0 where V//0 is the volume of the unit cell at normal pressure. The metal is observed to undergo a metal semiconductor transition for a compression of V/V//0 equals 0. 8 and a semiconductor to metal transition at V/V//0 equals 0. 6. The possibility of a valence change from 2** plus to 3** plus has been predicted for the volume range V equals 0. 6 V//0 to 0. 5 V//0. The changes in the Fermi surface topology, density of states, and resistivity have been investigated for the first time to provide confirmatory evidence for the above results.

引用

页码：359 / 370