The nature and diffusion of intrinsic point defects in SiC

被引：0

作者：

Bockstedte, Michel ^{[1
]}

Heid, Matthias ^{[1
]}

Mattausch, Alexander ^{[1
]}

Pankratov, Oleg ^{[1
]}

机构：

[1] Theor. Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7B2, DE-91058 Erlangen, Germany

来源：

Materials Science Forum | 2002年 / 389-393卷 / 01期

关键词：

Annealing - Diffusion - Lattice vibrations - Point defects - Vacancies;

D O I：

10.4028/www.scientific.net/msf.389-393.471

中图分类号：

学科分类号：

摘要：

We apply an ab initio method to study the nature of intrinsic point defects in SiC and their diffusion. An identification of intrinsic defect centers via localised vibrational modes and the hyperfine interaction is pursued. Our results identify possible annealing mechanisms of the vacancies. © 2002 Trans Tech Publications.

引用

页码：471 / 476