Modeling of mechanism of leakage in a shallow p+/n junction formed by preamorphization

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[1] Tanaka, Akira

[2] Yamaji, Tetsuo

[3] Nishikawa, Satoshi

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Tanaka, Akira | 1600年 / 30期

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[1] MODELING OF MECHANISM OF LEAKAGE IN A SHALLOW P+-N JUNCTION FORMED BY PREAMORPHIZATION
TANAKA, A
YAMAJI, T
NISHIKAWA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (5A): : L775 - L778
[2] Abnormal junction profile of silicided p+/n shallow junctions:: A leakage mechanism
Choi, CJ
Seong, TY
Lee, KM
Lee, JH
Park, YJ
Lee, HD
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (04) : 188 - 190
[3] SHALLOW P+ JUNCTION FORMATION BY A REVERSE-TYPE DOPANT PREAMORPHIZATION SCHEME
GANIN, E
DAVARI, B
HARAME, D
SCILLA, G
SAIHALASZ, GA
APPLIED PHYSICS LETTERS, 1989, 54 (21) : 2127 - 2129
[4] OPTIMIZATION OF GERMANIUM PREAMORPHIZATION IMPLANT SHALLOW P+ JUNCTIONS
LIU, J
WORTMAN, JJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C107 - C107
[5] Preamorphization induced defects and their effects on the electrical properties of shallow P+/N junctions
[6] AS+-PREAMORPHIZATION METHOD FOR SHALLOW P+-N JUNCTION FORMATION
KWON, SJ
KIM, HJ
LEE, JD
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2326 - L2328
[7] Influence of preamorphization on the properties of shallow p+ n-junctions in silicon radiation detectors
von Borany, J.
Kogler, R.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1993, A326 (1-2) : 42 - 46
[8] SHALLOW P+-N JUNCTION FORMATION BY THE OPTIMIZATION OF AS-PREAMORPHIZATION CONDITIONS
SANG, JK
JONG, DL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (03) : 867 - 870
[9] N+p junction leakage current in p/p+ epitaxial wafers
Murakami, Y
Fusegawa, K
Matsukawa, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9A): : 5559 - 5560
[10] N+p junction leakage current in p/p+ epitaxial wafers
Murakami, Y., 1600, Japan Society of Applied Physics (42):

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