Crack healing during molecular-beam-epitaxy growth of GaP/GaAs thin films

被引：0
|
作者：
机构：
[1] Li, Y.
[2] Weatherly, G.C.
[3] Niewczas, M.
来源：
Niewczas, M. (niewczas@mcmaster.ca) | 1600年 / American Institute of Physics Inc.卷 / 98期
关键词：
Number:; -; Acronym:; NSERC; Sponsor: Natural Sciences and Engineering Research Council of Canada;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
    Wangila, Emmanuel
    Lytvyn, Peter
    Stanchu, Hryhorii
    Gunder, Calbi
    de Oliveira, Fernando Maia
    Saha, Samir
    Das, Subhashis
    Eldose, Nirosh
    Li, Chen
    Zamani-Alavijeh, Mohammad
    Benamara, Mourad
    Mazur, Yuriy I.
    Yu, Shui-Qing
    Salamo, Gregory J.
    CRYSTALS, 2023, 13 (11)
  • [42] Epitaxial growth of organic thin films by organic molecular beam epitaxy
    Hara, Masahiko, 1600, (28):
  • [43] Growth of MnGeP2 thin films by molecular beam epitaxy
    Minami, K. (minami_5@cc.tuat.ac.jp), 1600, Japan Society of Applied Physics (44): : 8 - 11
  • [44] Desorption of indium during the growth of GaAs/InGaAs/GaAs heterostructures by molecular beam epitaxy
    Mozume, Teruo
    Ohbu, Isao
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (10): : 3277 - 3281
  • [45] Growth of MnGeP2 thin films by molecular beam epitaxy
    Minami, K
    Jogo, J
    Smirnov, V
    Yuasa, H
    Nagatsuka, T
    Ishibashi, T
    Morishita, Y
    Matsuo, Y
    Kangawa, Y
    Koukitu, A
    Sato, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (8-11): : L265 - L267
  • [46] Growth of Fe-As crystalline films on GaAs(100) by molecular beam epitaxy
    Jamil, A. T. M. K.
    Noguchi, H.
    Munekata, H.
    THIN SOLID FILMS, 2008, 516 (10) : 3015 - 3019
  • [47] STRUCTURES OF GAAS AND GAP THIN-FILMS FORMED BY RF ION-BEAM EPITAXY
    MURAYAMA, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (04): : 876 - 878
  • [48] Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy
    Cheng, TS
    Foxon, CT
    Ren, GB
    Jeffs, NJ
    Orton, JW
    Novikov, SV
    Xin, Y
    Brown, PD
    Humphreys, CJ
    Halliwell, M
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 259 - 262
  • [49] Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm
    Wang, JS
    Hsiao, RS
    Lin, G
    Lin, KF
    Liu, HY
    Lai, CM
    Wei, L
    Liang, CY
    Chi, JY
    Kovsh, AR
    Maleev, NA
    Livshits, DA
    Chen, JF
    Yu, HC
    Ustinov, VM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 2663 - 2667
  • [50] Molecular-beam-epitaxy growth and luminescence properties of Nd3+-doped LaF3/CaF2 thin films
    Zhang, X
    Daran, E
    Lahoz, F
    Serrano, C
    Pita, K
    Lam, YL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1443 - 1446
12345