共 50 条
- [42] Epitaxial growth of organic thin films by organic molecular beam epitaxy Hara, Masahiko, 1600, (28):
- [43] Growth of MnGeP2 thin films by molecular beam epitaxy Minami, K. (minami_5@cc.tuat.ac.jp), 1600, Japan Society of Applied Physics (44): : 8 - 11
- [44] Desorption of indium during the growth of GaAs/InGaAs/GaAs heterostructures by molecular beam epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (10): : 3277 - 3281
- [45] Growth of MnGeP2 thin films by molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (8-11): : L265 - L267
- [47] STRUCTURES OF GAAS AND GAP THIN-FILMS FORMED BY RF ION-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (04): : 876 - 878
- [48] Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 259 - 262
- [49] Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 2663 - 2667
- [50] Molecular-beam-epitaxy growth and luminescence properties of Nd3+-doped LaF3/CaF2 thin films JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1443 - 1446