Crack healing during molecular-beam-epitaxy growth of GaP/GaAs thin films

被引：0
|
作者：
机构：
[1] Li, Y.
[2] Weatherly, G.C.
[3] Niewczas, M.
来源：
Niewczas, M. (niewczas@mcmaster.ca) | 1600年 / American Institute of Physics Inc.卷 / 98期
关键词：
Number:; -; Acronym:; NSERC; Sponsor: Natural Sciences and Engineering Research Council of Canada;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] PHASE OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM-EPITAXY GROWTH OF GAAS(100)
    RESH, J
    JAMISON, KD
    STROZIER, J
    BENSAOULA, A
    IGNATIEV, A
    PHYSICAL REVIEW B, 1989, 40 (17): : 11799 - 11803
  • [32] SILICON MOLECULAR-BEAM EPITAXY ON GAP AND GAAS
    ZALM, PC
    BULLELIEUWMA, CWT
    MAREE, PMJ
    PHILIPS TECHNICAL REVIEW, 1987, 43 (5-6): : 154 - 165
  • [33] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001)
    ASPNES, DE
    HARBISON, JP
    STUDNA, AA
    FLOREZ, LT
    PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1687 - 1690
  • [34] Molecular-beam-epitaxy grown InAs islands on nominal and vicinal GaAs(2511)A surfaces
    Temko, Y
    Suzuki, T
    Xu, MC
    Jacobi, K
    SURFACE SCIENCE, 2005, 591 (1-3) : 117 - 132
  • [35] NOVEL STRAIN-INDUCED DEFECT IN THIN MOLECULAR-BEAM-EPITAXY LAYERS
    LEGOUES, FK
    COPEL, M
    TROMP, R
    PHYSICAL REVIEW LETTERS, 1989, 63 (17) : 1826 - 1829
  • [36] BAND-GAP OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS AND GAP SUBSTRATES
    LACKLISON, DE
    ORTON, JW
    HARRISON, I
    CHENG, TS
    JENKINS, LC
    FOXON, CT
    HOOPER, SE
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1838 - 1842
  • [37] Absolute measurement of effective radiative-efficiency in GaAs grown with molecular-beam-epitaxy
    Gerber, M. W.
    Kleiman, R. N.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (22)
  • [38] Ultrafast photoluminescence decay in GaAs grown by low-temperature molecular-beam-epitaxy
    Krotkus, A
    Marcinkevicius, S
    Viselga, R
    HOT CARRIERS IN SEMICONDUCTORS, 1996, : 113 - 115
  • [39] Smoothing of textured GaAs surfaces during molecular beam epitaxy growth
    Adamcyk, M
    Ballestad, A
    Pinnington, T
    Tiedje, T
    Davies, M
    Feng, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1488 - 1492
  • [40] THE OBSERVATION OF MONOLAYER AND BILAYER GROWTH DURING THE DEPOSITION OF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY
    FAWCETT, PN
    NEAVE, JH
    ZHANG, J
    JOYCE, BA
    SURFACE SCIENCE, 1993, 296 (01) : 67 - 74
12345