ION IMPLANTATION IN SEMICONDUCTORS.

被引：0

作者：

Bobenrieth, A.

Ngu, T.P.

Arnodo, C.

Morizot, M.

Dubee, A.

Cornette, A.

Assemat, J.L.

Nicholas, K.H.

Ford, R.A.

Donovan, R.P.

Littlejohn, M.A.

Roosild, S.A.

Fahrner, W.

Goetzberger, A.

Bernard, J.

机构：

来源：

| 1971年

关键词：

Ions;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Following is a continuation of the list of titles and authors. Junction Field Effect Transistors Fabricated by Ion Implantation. By A. Bobenrieth, T. P. Ngu and C. Arnodo. Microwave Transistors Fabricated by Ion-Implantation Selection of Doping Impurities and Phototype Realization. By M. Morizot, A. Dubee and A. Cornette. Application of Ion Implantation to N-P-N-Transistors. By J. L. Assemat. New Techniques for Improving High Value Ion Implanted Resistors. By K. H. Nicholas and R. A. Ford. Piezoresistive Properties of Ion Implanted Layers in Silicon. By R. P. Donovan, M. A. Littlejohn and S. A. Roosild. Surface States Induced by Ion Implantation. By W. Fahrner and A. Goetzberger. Speed Improvement of Ion Implanted Self Aligned Gate MOS Transistors. By J. Bernard.

引用