FORMATION OF DX CENTERS BY HEAVY Si DOPING IN MBE-GROWN AlxGa1 - xAs WITH LOW Al CONTENT.

被引：0

作者：

Ishikawa, Tomonori ^{[1
]}

Yamamoto, Tohru ^{[1
]}

Kondo, Kazuo ^{[1
]}

机构：

[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn

来源：

| 1600年 / 25期

关键词：

MOLECULAR BEAM EPITAXY - SILICON AND ALLOYS;

D O I：

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学科分类号：

摘要：

The dependence of shallow donors and DX centers on Si doping concentration in Al//xGa//1// minus //xAs layers grown by MBE has been investigated. In the shallow-to-DX transition region around x equals 0. 2, the concentration ratio of DX centers to shallow donors was proved to have strong dependence on Si doping concentration. While few DX centers were observed in the samples with an Si concentration of about 1 multiplied by 10**1**7 cm** minus **3, DX centers became dominant above 1 multiplied by 10**1**8 cm** minus **3. These results can be explained by the effect of electron distribution between GAMMA -valley and DX center level.

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