EFFECT OF UNCERTAINTY IN FAILURE RATES ON MEMORY SYSTEM RELIABILITY.

被引：0
|
作者：
Amer, Hassanein Hamed [1 ]
Iyer, Ravishankar Krishnan [1 ]
机构：
[1] Stanford Univ, Palo Alto, CA, USA, Stanford Univ, Palo Alto, CA, USA
来源：
IEEE Transactions on Reliability | 1986年 / R-35卷 / 04期
关键词：
CODES; SYMBOLIC - Error Correction - FAILURE ANALYSIS - PROBABILITY - STATISTICAL METHODS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of uncertainty in chip failure rates on memory system reliability is investigated. It is shown, using real data on memory failures, that the dispersion in failure rates can be as large as 80%, which can increase the unreliability of a memory system by up to 65%. Two simple models are proposed to evaluate the variability in memory reliability: a worst-case estimate, and a probabilistic model that needs only the mean and the standard deviation of the chip failure rate. With high failure rates, the maximum uncertainty in reliability occurs in the early system lifetime; with low failur rates, this effect is reversed.
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页码：377 / 379
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