OPTICAL CHARACTERISTICS OF IMPLANTED SILICON FILMS.

被引：0

作者：

Gavrilenko, V.I. ^{[1
]}

Zuev, V.A. ^{[1
]}

Kalandadze, T.M. ^{[1
]}

Litovchenko, V.G. ^{[1
]}

Popov, V.G. ^{[1
]}

机构：

[1] Marshal I. I. Yakubovskii Kiev Higher Tank School, Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, Sux

来源：

Soviet physics journal | 1984年 / 27卷 / 05期

关键词：

OPTICAL PROPERTIES - SEMICONDUCTING FILMS - Ion Implantation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The first data are presented on the change (following implantation) in the refractive index and the band structure of silicon on sapphire films. The implantation was effected with phosphor ions of 40 kev and doses from 10**1**2 to 10**1**6 cm** minus **2. An increase following implantation of the refractive index and the energy of the first direct allowed transitions E//1 is noted, indicating changes in the second coordination sphere. The profile E//1(x) is studied pointing to heterogenization effects. The films were annealed with ruby laser pulses of 0. 2 J/cm**2. The same laser was used to study the lux dependence of the injection level DELTA //n and surface photo-emf V// PHI . Hysteresis in the V// PHI ( DELTA //n) dependence (after the use of maximum intensity of the laser beam) is noted indicating irreversible straightening of the bands at the film surface.

引用

页码：385 / 394

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