ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF InAs-AlxGa1- xSb HETEROJUNCTIONS.

被引：0

作者：

Alferov, Zh.I.

Zhingarev, M.Z.

Korol'kov, V.I.

Mursakulov, N.N.

Pramatarova, L.D.

Tret'yakov, D.N.

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来源：

| 1978年 / 12卷 / 02期

关键词：

ELECTRIC PROPERTIES - PHOTOELECTRICITY - SEMICONDUCTING ALUMINUM COMPOUNDS - SEMICONDUCTING GALLIUM COMPOUNDS - SEMICONDUCTING INDIUM COMPOUNDS;

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摘要：

An investigation was made of the forward and reverse branches of the current- voltage characteristics and also of the photoelectric properties of epitaxial InAs-Al//xGa//1//- //xSb heterojunctions (x equals 0-0. 23). The current-voltage characteristics were investigated in the temperature range 290-430 degree K. Consideration was given to the possibility of reducing the reverse current in these heterostructures by the use of materials with long diffusion length and high minority- carrier densities, compared with p-n homojunction structures in the narrow- gap material. The experimental results confirmed this possibility. The investigated electrical and photoelectric properties of p-n and n-p heterostructures with different aluminum concentrations in the wide- gap region were used as the basis of a proposal of the energy band diagram of the InAs-Al//xGa//1//- //xSb heterojunctions and the main parameters of this diagram were determined.

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页码：180 / 183