Upper limits of useful n- and p-type doping in GaAs and AlAs

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Interdisc. Res. Ctr. for S.M., Blackett Laboratory, Imp. Coll. of Sci., Technol./Med., Prince Consort Road, London SW7 2BZ, United Kingdom [1 ]
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Mater Sci Eng B Solid State Adv Technol | / 1卷 / 39-45期
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The author acknowledges the contribution to this work by M.J. Ashvvin; (ICSTM); T.J. Bullough (Liverpool University); C.C. Button (Sheffield University); B.R; Davidson; M.R; Fahy; L; Hart; R. Jones (Exeter Univeristy); T.B. Joyce (Liverpool University); C.D. Latham (Exeter University); K; Muraki; (NTT; Atsugi-shi); S; Öberg; (Lulea University); C; Roberts; J.H; Tucker; J; Wagner; (Fraunhofer IAF; Freiburg) and S. P. Westwater (Liverpool University). The EPSRC UK is thanked for their financial support on grant GR/K96977;
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