Low-voltage thin-film electroluminescent devices with low-resistivity stacked insulators

被引：0

作者：

Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China ^{[1
]}

机构：

来源：

Appl. Opt. | / 3卷 / 545-550期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[41] DOMINANT FACTORS DETERMINING THE THRESHOLD VOLTAGE FOR THIN-FILM ELECTROLUMINESCENT DEVICES
HIRABAYASHI, K
SHIBATA, T
KOZAWAGUCHI, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1943 - 1946
[42] Characterization of AlON-TiON stacked insulators for ZnS:Mn thin film electroluminescent devices
Lim, JW
Yun, SJ
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (09) : H33 - H35
[43] APPLICATION OF THIN-FILM ELECTROLUMINESCENT DEVICES
THEIS, D
JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) : 191 - 207
[44] MEMORY IN THIN-FILM ELECTROLUMINESCENT DEVICES
HOWARD, WE
JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) : 155 - 173
[45] MEASURING ON THIN-FILM ELECTROLUMINESCENT DEVICES
MULLER, GO
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 139 (01): : 271 - 278
[46] ON THE EFFICIENCY OF THIN-FILM ELECTROLUMINESCENT DEVICES
MULLER, GO
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 139 (01): : 263 - 269
[47] DOMINANT FACTORS DETERMINING THE THRESHOLD VOLTAGE FOR THIN-FILM ELECTROLUMINESCENT DEVICES
HIRABAYASHI, K
SHIBATA, T
KOZAWAGUCHI, H
PROCEEDINGS OF THE SID, 1989, 30 (02): : 153 - 156
[48] Bright, low voltage europium doped gallium oxide thin film electroluminescent devices
Wellenius, P.
Suresh, A.
Muth, J. F.
APPLIED PHYSICS LETTERS, 2008, 92 (02)
[49] MEASURING THE CURRENT-VOLTAGE CHARACTERISTICS OF THIN-FILM ELECTROLUMINESCENT DEVICES
NEYTS, K
DEVISSCHERE, P
ACTA POLYTECHNICA SCANDINAVICA-APPLIED PHYSICS SERIES, 1990, (170): : 291 - 294
[50] Low-voltage driven flexible organic thin-film transistor humidity sensors
Yin, Ming-Jie
Li, Zi-Rong
Lv, Tian-Run
Yong, Ken-Tye
An, Quan-Fu
SENSORS AND ACTUATORS B-CHEMICAL, 2021, 339

← 1 2 3 4 5 →