Evaluation of charge passed through gate-oxide films using a charging damage measurement electrode

被引：0

作者：

Watanabe, Seiichi ^{[1
]}

Sumiya, Masahiro ^{[1
]}

Tamura, Hitoshi ^{[2
]}

Yoshioka, Ken ^{[3
]}

Tokunaga, Takafumi ^{[4
]}

Mizutani, Tatsumi ^{[1
]}

机构：

[1] Kasado R and D Center, Power and Industrial Systems, Hitachi Ltd., Kudamatsu, Yamaguchi 744, Japan

[2] Mechanical Engineering Research Laboratory, Hitachi Ltd., Tsuchiura, Ibaraki 300, Japan

[3] Kasado Semiconductor Equipment Product Division, Power and Industrial Systems, Hitachi Ltd., Kudamatsu, Yamaguchi 744, Japan

[4] Device Development Center, Hitachi Ltd., Ome, Tokyo 198, Japan

来源：

| 2000年 / JJAP, Tokyo, Japan卷 / 39期

关键词：

Charging damage measurement - Electron shading effect - Plasma etchers - Time modulation (TM) bias;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 18 条

[1] Evaluation of charge passed through gate-oxide films using a charging damage measurement electrode
Watanabe, S
Sumiya, M
Tamura, H
Yoshioka, K
Tokunaga, T
Mizutani, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (2A): : 662 - 668
[2] Plasma charging damage of ultra-thin gate-oxide - the measurement dilemma
Cheung, Kin P.
Mason, Philip
Hwang, David
International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 2000, : 10 - 13
[3] Plasma charging damage of ultra-thin gate-oxide - The measurement dilemma
Cheung, KP
Mason, P
Hwang, D
2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 2000, : 10 - 13
[4] Gate-oxide integrity evaluation using non-ideal metal-oxide-silicon capacitor structures
Mchedlidze, T
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 735 - 740
[5] CMOS charge pumps using cross-coupled charge transfer switches with improved voltage pumping gain and low gate-oxide stress for low-voltage memory circuits
Min, KS
Ahn, JH
IEICE TRANSACTIONS ON ELECTRONICS, 2002, E85C (01) : 225 - 229
[6] CMOS charge pumps using cross-coupled charge transfer switches with improved voltage pumping gain and low gate-oxide stress for low-voltage memory circuits
Min, KS
Kim, YH
Ahn, JH
Chung, Y
Sakurai, T
2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL V, PROCEEDINGS, 2002, : 545 - 548
[7] Quantitative evaluation of gate oxide damage plasma processing using antenna-structure capacitors
Eriguchi, Koji, 1600, Publ by JJAP, Minato-ku, Japan (33):
[8] Charge pumping technique for the evaluation of plasma induced edge damage in shallow S/D extension thin gate oxide NMOSFET's
Chung, Steve S., 2000, IEEE, Piscataway, NJ, United States
[9] QUANTITATIVE-EVALUATION OF GATE OXIDE DAMAGE DURING PLASMA PROCESSING USING ANTENNA-STRUCTURE CAPACITORS
ERIGUCHI, K
URAOKA, Y
NAKAGAWA, H
TAMAKI, T
KUBOTA, M
NOMURA, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 83 - 87
[10] Evaluation of electron shading charge buildup damage using metal-nitride-oxide-silicon capacitors
Mitsubishi Electric Corp, Hyogo, Japan
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 4 B (2521-2525):

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