Electrical properties of amorphous Si-P/p-type Si Schottky barrier contact

被引:0
|
作者
机构
[1] Ogino, Toshio
来源
Ogino, Toshio | 1600年 / 30期
关键词
Semiconducting Silicon;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] SCHOTTKY CONTACT OF GALLIUM ON P-TYPE SILICON
    Modi, B. P.
    Patel, K. D.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) : 684 - 690
  • [42] SCHOTTKY-BARRIER HEIGHTS OF TI AND TISI2 ON N-TYPE AND P-TYPE SI(100)
    ABOELFOTOH, MO
    TU, KN
    PHYSICAL REVIEW B, 1986, 34 (04): : 2311 - 2318
  • [43] p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices
    Choi, Wonchul
    Lee, Jaehyun
    Shin, Mincheol
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (01) : 37 - 43
  • [44] Development of p-Type Nano Crystalline Si Film for Electrical Contact Layer with the Front Electrode of Amorphous Silicon Oxide Type Solar Cell
    Kim, Sangho
    Iftiquar, S. M.
    Park, Jinjoo
    Duy Phong Pham
    Shin, Chonghoon
    Yi, Junsin
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (10) : 10675 - 10680
  • [45] Schottky barrier height of TiN/p-type Si(100) evaluated by forward current-voltage-and capacitance
    Pelleg, J
    Douhin, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (01): : 178 - 185
  • [46] P-type poly-Si/SiOx contact by aluminium-induced crystallization of amorphous silicon
    Sharma, Rajiv
    Szlufcik, Jozef
    Radhakrishnan, Hariharsudan Sivaramakrishnan
    Poortmans, Jef
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2022, 234
  • [47] THE SI-29 KNIGHT-SHIFT IN SI-P AND SI-P,B IN THE VICINITY OF THE METAL-INSULATOR-TRANSITION
    HOCH, MJR
    THOMANSCHEFSKY, U
    HOLCOMB, DF
    PHYSICA B, 1990, 165 : 305 - 306
  • [48] Ultrahigh Al Schottky barrier to p-Si
    Horváth, ZJ
    Adám, M
    Van Tuyen, V
    Dücso, C
    ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 1998, : 83 - 86
  • [49] Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot
    Dhimmar, J. M.
    Desai, H. N.
    Modi, B. P.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2016, 8 (02)