X-Ray Study of (In2Te3)x(3HgTe)1 - x Single Crystals.

On the basis of an X-ray study in the 80-300 K range, certain values of the parameters characterizing the bond strength in the (In//2Te//3)//x(3HgTe)//1// minus //x crystal lattice with a variable concentration of stoichiometric vacancies have been determined. The increase in the anharmonicity of the atom vibrations with an increase in the In//2Te//3 concentration in HgTe and, correspondingly, the variation of the dynamic and other properties of the alloys may be attributed to an increase in the concentration of stoichiometric vacancies, accompanied by an increase in the static displacements of the atoms adjacent to the stoichiometric vacancies in the crystal lattice of the investigated semiconductors.