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- [47] FINE-STRUCTURE OF EL2 DEFECT ABSORPTION IN GAAS APPLIED PHYSICS LETTERS, 1988, 53 (25) : 2558 - 2559
- [48] COMMENT ON IDENTIFICATION OF A DEFECT IN A SEMICONDUCTOR - EL2 IN GAAS - REPLY PHYSICAL REVIEW B, 1987, 36 (14): : 7671 - 7672
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