EL2 defect metastability-related transients revisited

被引：0

作者：

Radic, Nikola ^{[1
]}

Santic, Branko ^{[1
]}

Desnica, Uros V. ^{[1
]}

机构：

[1] Rudler Boskovic Inst, Zagreb, Croatia

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 11期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：5922 / 5925

共 50 条

[21] THE SYMMETRY OF THE EL2 DEFECT IN THE METASTABLE STATE
TRAUTMAN, P
BARANOWSKI, JM
ACTA PHYSICA POLONICA A, 1992, 82 (04) : 609 - 612
[22] ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS
WAGER, JF
VANVECHTEN, JA
PHYSICAL REVIEW B, 1987, 35 (05) : 2330 - 2339
[23] IDENTIFICATION OF A DEFECT IN A SEMICONDUCTOR - EL2 IN GAAS
VONBARDELEBEN, HJ
STIEVENARD, D
DERESMES, D
HUBER, A
BOURGOIN, JC
PHYSICAL REVIEW B, 1986, 34 (10): : 7192 - 7202
[24] EL2 revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs
Kabiraj, D
Ghosh, S
APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3
[25] PHOTOQUENCHING AND PHOTOINDUCED-RECOVERY PROPERTIES OF THE EL2 DEFECT IN GAAS - EVIDENCE AGAINST THE IDENTIFICATION OF EL2 WITH THE ISOLATED ASGA DEFECT
MANASREH, MO
FISCHER, DW
PHYSICAL REVIEW B, 1989, 39 (17): : 13001 - 13004
[26] ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS - COMMENT
MANASREH, MO
PHYSICAL REVIEW B, 1988, 37 (05): : 2722 - 2723
[27] ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS - COMMENT
VONBARDELEBEN, HJ
BOURGOIN, JC
STIEVENARD, D
PHYSICAL REVIEW B, 1989, 39 (03): : 1966 - 1966
[28] ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS - REPLY
WAGER, JF
VANVECHTEN, JA
PHYSICAL REVIEW B, 1989, 39 (03): : 1967 - 1969
[29] REGENERATION OF THE EL2 DEFECT IN HYDROGEN PASSIVATED GAAS
BALL, CAB
CONIBEAR, AB
LEITCH, AWR
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 : 697 - 702
[30] ARSENIC ANTISITE DEFECT ASGA AND EL2 IN GAAS
MEYER, BK
HOFMANN, DM
NIKLAS, JR
SPAETH, JM
PHYSICAL REVIEW B, 1987, 36 (02): : 1332 - 1335

← 1 2 3 4 5 →