Effects of oxidation ambient and low temperature post oxidation anneal on the silicon/oxide interface structure and the electrical properties of the thin gate oxide

被引：0

作者：

Cho, Won-Ju ^{[1
]}

Kim, Yeong-Cheol ^{[1
]}

Kim, Eung-Soo ^{[2
]}

Kim, Hong-Seok ^{[1
]}

机构：

[1] LG Semicon Co., Ltd., 1, Hyangjeong-dong, Hungduk-gu, Cheongju, 360-480, Korea, Republic of

[2] Dept. of Electronics Engineering, Pusan Univ. of Foreign Studies 55-1, Uam-dong, Nam-gu, Pusan, 608-738, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 1 A期

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页码：12 / 16