Charged particle detection properties of epitaxial 4H-SiC Schottky diodes

被引：0

作者：

Nava, F. ^{[1
]}

Vanni, P. ^{[1
]}

Verzellesi, G. ^{[2
]}

Castaldini, A. ^{[3
]}

Cavallini, A. ^{[3
]}

Polenta, L. ^{[3
]}

Nipoti, R. ^{[4
]}

Donolato, C. ^{[4
]}

机构：

[1] INFN, Physics Department, Univ. of Modena and Reggio Emilia, via Campi 213/A, IT-41100 Modena, Italy

[2] INFM, DSI, Univ. of Modena and Reggio Emilia, via Campi 213/B, IT-41100 Modena, Italy

[3] INFM, Physics Department, University of Bologna, v. le Berti Pichat 6/2, IT-40100 Bologna, Italy

[4] CNR-Istituto LAMEL, via Gobetti 101, IT-40129 Bologna, Italy

来源：

| 2001年 / Trans Tech Publ, Uetikon-Zuerich卷 / 353-356期

关键词：

Charged particles - Crystal orientation - Crystalline materials - Radiation detectors - Schottky barrier diodes - Silicon wafers - Surface structure;

D O I：

10.4028/www.scientific.net/msf.353-356.757

中图分类号：

学科分类号：

摘要：

This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radiation and investigates the influence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Values of 500 ns and 95 μs are inferred for the hole and electron lifetime, respectively.

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