Atomic scale stresses and strains in Ge/Si(001) nanopixels: An atomistic simulation study

被引：0
|
作者：
机构：
[1] Makeev, Maxim A.
[2] 1,Yu, Wenbin
[3] 1,Madhukar, Anupam
来源：
Makeev, M.A. (makeev@usc.edu) | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Atomic structure of a monolayer of Ge on Si(001)(2 x 1)
    Jenkins, SJ
    Srivastava, GP
    SURFACE REVIEW AND LETTERS, 1998, 5 (01) : 97 - 100
  • [32] Control of surface composition on Ge/Si(001) by atomic hydrogen irradiation
    Kobayashi, Y
    Sumitomo, K
    Shiraishi, K
    Urisu, T
    Ogino, T
    SURFACE SCIENCE, 1999, 436 (1-3) : 9 - 14
  • [33] Atomic scale characterization of InGaAs/GaAs/Si heterostructure by HRTEM, atomistic modeling and multislice image simulation
    Zheleva, T
    Ichimura, M
    Oktyabrsky, S
    Narayan, J
    SEMICONDUCTOR CHARACTERIZATION: PRESENT STATUS AND FUTURE NEEDS, 1996, : 688 - 692
  • [34] Strain-induced atomic rearrangements in Ge overlayers on Si(001)
    Oyanagi, H
    Sakamoto, K
    Shioda, R
    JOURNAL DE PHYSIQUE IV, 1997, 7 (C2): : 669 - 673
  • [35] Atomic structures of Si and Ge σ=13 [001] tilt grain boundaries studied by high-resolution electron microscopy and atomistic simulations
    Rouviere, Jean-Luc
    Lancon, Frederic
    Duparc, Olivier Hardouin
    PHILOSOPHICAL MAGAZINE, 2013, 93 (10-12) : 1230 - 1249
  • [36] Monte Carlo simulation of the surface structure of Ge on Si(001)
    Nurminen, L
    Tavazza, F
    Landau, DP
    Kuronen, A
    Kaski, K
    COMPUTER SIMULATION STUDIES IN CONDENSED-MATTER PHYSICS XV, 2003, 90 : 142 - 146
  • [37] Large-scale atomistic simulations of atomic displacements, stresses, and strains in nanoscale mesas: Effect of mesa edges, corners, and interfaces
    Makeev, MA
    Madhukar, A
    APPLIED PHYSICS LETTERS, 2002, 81 (20) : 3789 - 3791
  • [38] Simulations of atomic level stresses in systems of buried Ge/Si islands
    Makeev, MA
    Madhukar, A
    PHYSICAL REVIEW LETTERS, 2001, 86 (24) : 5542 - 5545
  • [39] Phosphine dissociation and diffusion on Si(001) observed at the atomic scale
    Schofield, SR
    Curson, NJ
    Warschkow, O
    Marks, NA
    Wilson, HF
    Simmons, MY
    Smith, PV
    Radny, MW
    McKenzie, DR
    Clark, RG
    JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (07): : 3173 - 3179
  • [40] Atomic-scale nanowires on Si(001): Cu on Bi
    Rodriguez-Prieto, Alvaro
    Bowler, David R.
    PHYSICAL REVIEW B, 2010, 82 (04):
12345