NOISE ASSOCIATED WITH SUBSTRATE CURRENT IN FINE-LINE NMOS FIELD-EFFECT TRANSISTORS.

被引：0

作者：

Jindal, J.P. ^{[1
]}

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 06期

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摘要：

引用

页码：1047 / 1052

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