FORMULA FOR 1/f-FLICKER NOISE IN p-n JUNCTIONS.

被引：0

作者：

Mueller, Otward

机构：

来源：

AEU-Archiv fur Elektronik und Ubertragungstechnik | 1974年 / 28卷 / 10期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTOR DEVICES

引用

页码：429 / 432

共 50 条

[1] FORMULA FOR 1-F FLICKER NOISE IN P-N-JUNCTIONS
MULLER, O
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1974, 28 (10): : 429 - 432
[2] Light induced creation of P-N junctions.
Behl, M
Zentel, R
Broer, DJ
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2004, 227 : U453 - U453
[3] 1/f dielectric polarization noise in silicon p-n junctions
Akiba, M
APPLIED PHYSICS LETTERS, 1997, 71 (22) : 3236 - 3238
[4] EFFECT OF HYDROGEN IMPLANTATION ON POLYSILICON P-N JUNCTIONS.
Chen, Dao-Long
Guzman, Alberto M.
Greve, David W.
IEEE Transactions on Electron Devices, 1986, ED-33 (02) : 270 - 274
[5] TEMPERATURE DEPENDENCES OF THE CHARACTERISTICS OF MICROPLASMAS IN p-n JUNCTIONS.
Isaev, M.R.
Mutalibov, Sh.R.
1600, (10):
[6] THERMAL FEEDBACK PRODUCED 1/F-FLICKER NOISE IN BIPOLAR TRANSISTORS
MULLER, O
NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1969, 22 (01): : 20 - &
[7] SILICON PHOTOCELLS WITH FIELD-INDUCED p-n JUNCTIONS.
Gil'man, B.I.
Zaks, M.B.
Kasatkin, V.V.
Skokov, Yu.V.
Sorokin, Yu.V.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (07): : 831 - 832
[8] MEASUREMENT OF THE DIFFUSION LENGTH OF MINORITY CARRIERS IN p-n JUNCTIONS.
Lovyagin, R.N.
Semenova, N.R.
1978, 21 (6 pt 2): : 1630 - 1632
[9] NONLINEAR THEORY OF THE AMPLIFICATION OF LIGHT IN LASER p-n JUNCTIONS.
Shakhidzhanov, S.S.
1973, 6 (08): : 1241 - 1246
[10] BISTABLE NOISE IN P-N JUNCTIONS
HSU, ST
SOLID-STATE ELECTRONICS, 1971, 14 (06) : 487 - +