Current voltage characteristics of p-p isotype InGaAlP/GaAs heterojunction with a large valence-band discontinuity

被引：0
|
作者：
Itaya, Kazuhiko [1 ]
Ishikawa, Masayuki [1 ]
Hatakoshi, Gen-ichi [1 ]
机构：
[1] Toshiba Corp, Kawasaki, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 5 S期
关键词：
Heterospike - Indium gallium aluminum phosphide - Valence band discontinuity - Voltage drop;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1919 / 1922
相关论文
共 50 条
  • [1] CURRENT-VOLTAGE CHARACTERISTICS OF P-P ISOTYPE INGAALP GAAS HETEROJUNCTION WITH A LARGE VALENCE-BAND DISCONTINUITY
    ITAYA, K
    ISHIKAWA, M
    HATAKOSHI, G
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (5A): : 1919 - 1922
  • [2] THE SI/GAAS (110) HETEROJUNCTION - STRAIN, DISORDER, AND VALENCE-BAND DISCONTINUITY
    LIST, RS
    WOICIK, JC
    LINDAU, I
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1279 - 1283
  • [3] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS
    ARNOLD, D
    KETTERSON, A
    HENDERSON, T
    KLEM, J
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1237 - 1239
  • [4] VALENCE-BAND MAXIMA IN P-GAAS AT K=0.05 KB
    PINSON, WEJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 417 - &
  • [5] X-ray photoelectron spectroscopy of zinc blend InN and valence-band discontinuity in the heterojunction InN/GaAs
    Yang, T
    Naoi, Y
    Naoi, H
    Sakai, S
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 504 - 505
  • [6] ON THE CURRENT-VOLTAGE CHARACTERISTICS OF n + -p-p + DIODES.
    Chuang, C.T.
    IEEE Transactions on Electron Devices, 1983, ED-30 (12) : 1709 - 1716
  • [7] CURRENT VOLTAGE CHARACTERISTICS OF N-ALGAAS/P-GAAS HETEROJUNCTION DIODES
    CHAND, N
    FISCHER, R
    KLEM, J
    MORKOC, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 605 - 608
  • [8] DETERMINATION OF THE VALENCE-BAND OFFSET OF GAAS-(GA,IN)P QUANTUM-WELLS BY PHOTOREFLECTANCE SPECTROSCOPY
    ARNAUD, G
    BORING, P
    GIL, B
    GARCIA, JC
    LANDESMAN, JP
    LEROUX, M
    PHYSICAL REVIEW B, 1992, 46 (03): : 1886 - 1888
  • [9] OBSERVATION OF VALENCE-BAND DISCONTINUITY OF HYDROGENATED AMORPHOUS-SILICON HYDROGENATED AMORPHOUS-SILICON CARBIDE HETEROJUNCTION BY PHOTOCURRENT-VOLTAGE MEASUREMENTS
    OKAYASU, Y
    FUKUI, K
    MATSUMURA, M
    APPLIED PHYSICS LETTERS, 1987, 50 (05) : 248 - 249
  • [10] Current-voltage characteristics of p-GaAs/n-GaN heterojunction fabricated by wafer bonding
    Liang, Ting
    Guo, Xia
    Guan, Baolu
    Guo, Jing
    Gu, Xiaoling
    Lin, Qiaoming
    Wu, Di
    Gao, Guo
    Zhu, Yanxu
    Shen, Guandi
    APPLIED PHYSICS LETTERS, 2007, 90 (10)
12345