Identification of vacancy-type defects in molecular beam epitaxy-grown GaAs using a slow positron beam

被引：0
|
作者：
Wei, Long [1 ]
Tanigawa, Shoichiro [1 ]
Uematsu, Masashi [1 ]
Maezawa, Koichi [1 ]
机构：
[1] Univ of Tsukuba, Tsukuba, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 07期
关键词：
Crystal defects - Epitaxial growth - Molecular beam epitaxy - Semiconducting films - Semiconductor growth;
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学科分类号：
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页码：2056 / 2060
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