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- [2] INFLUENCE OF YTTERBIUM ON THE FORMATION OF RADIATION DEFECTS IN P-N STRUCTURES MADE OF GALLIUM-PHOSPHIDESOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1180 - 1181GRINSON, AAGUTKIN, AAKASATKIN, VASIDOROV, VGSHLIKHTOV, SN
- [3] LUMINESCENT P-N JUNCTIONS IN GALLIUM PHOSPHIDEPHILIPS TECHNICAL REVIEW, 1964, 25 (01): : 20 - &GLASSER, WGRIMMEISS, HGSCHOLZ, H
- [4] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDEJOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1338 - &GERSHENZON, MMIKULYAK, RM
- [5] PREPARATION AND CHARACTERISTICS OF P-N JUNCTIONS IN GALLIUM PHOSPHIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : C65 - C66GERSHENZON, MMIKULYAK, RM
- [6] ELECTRICAL PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONSSOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (12): : 2813 - +ALFEROV, ZIKOROLKOV, VITRUKAN, MK
- [7] INVESTIGATION OF INJECTION ELECTROLUMINESCENCE OF P-N JUNCTIONS IN GALLIUM PHOSPHIDESOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (04): : 450 - +UTKIN, YAZABELINA, LGBUKHAROV.TAPATRAKOV.AYBORSHCHE.ASZYKOV, AMPESKOV, OG
- [8] PREPARATION AND DETECTION OF DIFFUSION P-N JUNCTIONS IN GALLIUM PHOSPHIDEINSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1965, (02): : 449 - &IGNATKIN.RSKOGAN, LMLIBOV, LDMESKIN, SS
- [10] RECOMBINATION RADIATION SPECTRUM OF GALLIUM ARSENIDE WITH CURRENT EXCITATION VIA P-N HETEROJUNCTIONS OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDESOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (08): : 1919 - +ALFEROV, ZIGABRUZOV, DZ