ELECTRICAL CONDUCTIVITY OF NON-HYDROGENATED AMORPHOUS TETRACOORDINATED SEMICONDUCTORS.

被引:0
|
作者
Theye, Marie-Luce [1 ]
Gheorghiu, Adriana [1 ]
Rappeneau, Therese [1 ]
Udron, Dominique [1 ]
机构
[1] CNRS, Paris, Fr, CNRS, Paris, Fr
来源
| 1987年
关键词
SEMICONDUCTING GERMANIUM - SEMICONDUCTING SILICON;
D O I
暂无
中图分类号
学科分类号
摘要
The authors present the results of conductivity measurements as a function of temperature performed on a series of flash-evaporated a-III-V compounds, in comparison with those previously obtained on evaporated a-Ge. All samples have been deposited under controlled conditions and their global composition has been checked. They have also been studied by other methods, which brings additional information for the analysis of the data. Yet, the dispersion of the results remains too large, and the information appears too restricted, for proposing a unified model of transport in a-compounds. The authors, however, show that one must call for conduction mechanisms different from those admitted in a-Ge and a-Si, because the localized states in the pseudo-gap are not distributed in the same way.
引用
收藏
相关论文
共 50 条
  • [21] IMPROVED ELECTRICAL-PROPERTIES OF NON-HYDROGENATED A-SI DENSIFIED BY IBAD
    CRAIGEN, DC
    BRODIE, DE
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (49) : 9843 - 9854
  • [22] ANOMALOUS CHARGE TRANSPORT IN AMORPHOUS SEMICONDUCTORS.
    Arkhipov, V.I.
    Rudenko, A.I.
    Soviet physics. Semiconductors, 1979, 13 (07): : 792 - 795
  • [23] CHEMISTRY AND PHYSICS OF COVALENT AMORPHOUS SEMICONDUCTORS.
    Adler, David
    1985, : 5 - 103
  • [24] Anomalous enhancement in radiation induced conductivity of hydrogenated amorphous silicon semiconductors
    Sato, Shin-ichiro
    Sai, Hitoshi
    Ohshima, Takeshi
    Imaizumi, Mitsuru
    Shimazaki, Kazunori
    Kondo, Michio
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 286 : 29 - 34
  • [25] Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs films
    Angelico, Joao C.
    Pereira, Andre L. J.
    de Arruda, Larisa B.
    Dias da Silva, Jose H.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 630 : 78 - 83
  • [26] Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs films
    Angelico, João C.
    Pereira, André L.J.
    De Arruda, Larisa B.
    Dias Da Silva, José H.
    Journal of Alloys and Compounds, 2015, 630 : 78 - 83
  • [27] ON THE CONSTANT PHOTOCONDUCTIVITY METHOD IN AMORPHOUS SEMICONDUCTORS.
    Pickin, William
    Alonso, J.C.
    Mendoza, D.
    1600, (20):
  • [28] ELECTRONIC TRANSPORT IN TETRAHEDRAL AMORPHOUS SEMICONDUCTORS.
    Thomas, P.
    Acta Polytechnica Scandinavica, Electrical Engineering Series, 1982, (50): : 279 - 364
  • [29] AC CONDUCTIVITY OF HIGHLY INHOMOGENEOUS SEMICONDUCTORS.
    Chaikovskii, I.A.
    Shmelev, G.M.
    German, A.I.
    Physica Status Solidi (B) Basic Research, 1985, 129 (01): : 393 - 398
  • [30] MODELING OF ″MEMORY″ EFFECTS IN AMORPHOUS SEMICONDUCTORS.
    Ionov, A.N.
    Ryvkin, S.M.
    Shlimak, I.S.
    1973, 6 (11): : 1947 - 1948