The authors present the results of conductivity measurements as a function of temperature performed on a series of flash-evaporated a-III-V compounds, in comparison with those previously obtained on evaporated a-Ge. All samples have been deposited under controlled conditions and their global composition has been checked. They have also been studied by other methods, which brings additional information for the analysis of the data. Yet, the dispersion of the results remains too large, and the information appears too restricted, for proposing a unified model of transport in a-compounds. The authors, however, show that one must call for conduction mechanisms different from those admitted in a-Ge and a-Si, because the localized states in the pseudo-gap are not distributed in the same way.