LOW-ENERGY DOUBLE-ION-BEAM DEPOSITION SYSTEM.

被引：0

作者：

Yoshida, Yoshikazu ^{[1
]}

Ohnishi, Teruhito ^{[1
]}

Sekihara, Toshinobu ^{[1
]}

Hirofuji, Yuichi ^{[1
]}

机构：

[1] Matsushita Industrial Co, Kadoma, Jpn, Matsushita Industrial Co, Kadoma, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1988年 / 27卷 / 01期

关键词：

FILMS - Preparation - ION BEAMS - Applications - TANTALUM COMPOUNDS - Thin Films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A low-energy double-ion-beam deposition system for high-quality thin-dielectric-film formations has been developed. The system consists of two beam lines (a metal ion beam line and a gas ion beam line) and has a new type of ion-beam deceleration electrodes which can be moved like a folding screen. In this system, decelerated Ta** plus and oxygen ion beams of about 80 and 180 mu A/cm**2, respectively, were obtained in a final-energy range of 100-200 ev. In a deposition test, by simultaneously irradiating with a mass separated Ta** plus ion beam and an oxygen ion beam, pure and stoichiometric Ta//2O//5 films of 50 nm thickness were obtained in one hour at room temperature.

引用

页码：140 / 143