Selective area epitaxy of GaAs using GaAs oxide as a mask

被引:0
|
作者
机构
[1] Hiratani, Yuji
[2] Ohki, Yoshimasa
[3] Sugimoto, Yoshimasa
[4] Akita, Kenzo
[5] Taneya, Mototaka
[6] Hidaka, Hiroshi
来源
Hiratani, Yuji | 1600年 / 29期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy
    Chereau, Emmanuel
    Dubrovskii, Vladimir G.
    Gregoire, Gabin
    Avit, Geoffrey
    Staudinger, Philipp
    Schmid, Heinz
    Bougerol, Catherine
    Coulon, Pierre-Marie
    Shields, Philip A.
    Trassoudaine, Agnes
    Gil, Evelyne
    LaPierre, Ray R.
    Andre, Yamina
    CRYSTAL GROWTH & DESIGN, 2023, 23 (06) : 4401 - 4409
  • [42] Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy
    Lin, Andrew
    Shapiro, Joshua N.
    Senanayake, Pradeep N.
    Scofield, Adam C.
    Wong, Ping-Show
    Liang, Baolai
    Huffaker, Diana L.
    NANOTECHNOLOGY, 2012, 23 (10)
  • [43] IN-SITU GAAS SELECTIVE-AREA GROWTH ON A PATTERNED GAN MASK BY MOMBE USING TDMAAS
    YOSHIDA, S
    SASAKI, M
    JOURNAL OF CRYSTAL GROWTH, 1995, 151 (1-2) : 220 - 223
  • [44] Selective-area epitaxial growth of GaAs in deep dielectric windows using molecular beam epitaxy
    Loke, WK
    Yoon, SF
    Zheng, HQ
    JOURNAL OF CRYSTAL GROWTH, 2001, 222 (1-2) : 44 - 52
  • [45] Selective-area metalorganic molecular beam epitaxy of GaAs using metalorganic chloride gallium precursors
    Shiraishi, Y
    Furuhata, N
    Okamoto, A
    JOURNAL OF CRYSTAL GROWTH, 1997, 182 (3-4) : 255 - 265
  • [46] In-situ selective area etching of GaAs in metalorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic
    Hayashi, T
    Asahi, H
    Yamamoto, K
    Hidaka, K
    Gonda, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (07): : 3814 - 3818
  • [47] Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy
    Kim, SI
    Park, YK
    Kim, YT
    Tan, HH
    Jagadish, C
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXI), 1999, 99 (17): : 64 - 69
  • [48] In-situ selective area etching of GaAs in metallorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic
    Osaka Univ, Osaka, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 7 (3814-3818):
  • [49] SELECTIVE-AREA EPITAXY OF GAAS THROUGH SILICON DIOXIDE WINDOWS BY MOLECULAR-BEAM EPITAXY
    HONG, JM
    WANG, S
    SANDS, T
    WASHBURN, J
    FLOOD, JD
    MERZ, JL
    LOW, T
    APPLIED PHYSICS LETTERS, 1986, 48 (02) : 142 - 144
  • [50] IN-SITU OBSERVATION OF GAAS SELECTIVE EPITAXY ON GAAS (111)B SUBSTRATES
    ALLEGRETTI, F
    INOUE, M
    NISHINAGA, T
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 354 - 358