Selective area epitaxy of GaAs using GaAs oxide as a mask

被引:0
|
作者
机构
[1] Hiratani, Yuji
[2] Ohki, Yoshimasa
[3] Sugimoto, Yoshimasa
[4] Akita, Kenzo
[5] Taneya, Mototaka
[6] Hidaka, Hiroshi
来源
Hiratani, Yuji | 1600年 / 29期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] SELECTIVE AREA EPITAXY OF GAAS USING GAAS OXIDE AS A MASK
    HIRATANI, Y
    OHKI, Y
    SUGIMOTO, Y
    AKITA, K
    TANEYA, M
    HIDAKA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08): : L1360 - L1362
  • [2] INSITU SELECTIVE-AREA EPITAXY OF GAAS USING A GAAS OXIDE LAYER AS A MASK
    HIRATANI, Y
    OHKI, Y
    SUGIMOTO, Y
    AKITA, K
    JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 570 - 573
  • [3] INSITU SELECTIVE-AREA EPITAXY OF A GAAS-BASED HETEROSTRUCTURE USING A GAAS OXIDE LAYER AS A MASK
    HIRATANI, Y
    OHKI, Y
    SASAKI, M
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 74 - 78
  • [4] Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy
    Yoshiba, Ippei
    Iwai, Takayuki
    Uehara, Takahiro
    Horikoshi, Yoshiji
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 190 - 193
  • [5] SELECTIVE-AREA EPITAXY OF GAAS USING A GAN MASK IN IN-SITU PROCESSES
    YOSHIDA, S
    SASAKI, M
    KAWANISHI, H
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 37 - 41
  • [6] SELECTIVE EPITAXY OF GAAS ON INDIUM OXIDE MASK FOLLOWED BY IN-SITU REMOVAL OF THE MASK
    OZASA, K
    YE, TC
    AOYAGI, Y
    APPLIED PHYSICS LETTERS, 1993, 63 (12) : 1634 - 1636
  • [7] Area selective epitaxy of In As on GaAs(001) and GaAs(111)A by migration enhanced epitaxy
    Zander, M.
    Nishinaga, J.
    Iga, K.
    Horikoshi, Y.
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 9 - 12
  • [8] FABRICATION OF GAAS PHOTODIODE USING LASER SELECTIVE AREA EPITAXY
    LIU, H
    ROBERTS, JC
    RAMDANI, J
    BEDAIR, SM
    FARARI, J
    VILCOT, JP
    DECOSTER, D
    APPLIED PHYSICS LETTERS, 1991, 58 (04) : 388 - 390
  • [9] Selective area epitaxy of GaAs using tri-isopropylgallium
    Ruth Zhang
    Raymond Tsui
    Kumar Shiralagi
    John Tresek
    Journal of Electronic Materials, 1998, 27 : 446 - 450
  • [10] Selective area epitaxy of GaAs using tri-isopropylgallium
    Zhang, R
    Tsui, R
    Shiralagi, K
    Tresek, J
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) : 446 - 450