KINETIC MODEL FOR PLASMA ETCHING SILICON IN A SF6/O2 RF DISCHARGE.

被引：0

作者：

Anderson, H.M. ^{[1
]}

Merson, J.A. ^{[1
]}

Light, R.W. ^{[1
]}

机构：

[1] Univ of New Mexico, Albuquerque, NM,, USA, Univ of New Mexico, Albuquerque, NM, USA

来源：

IEEE Transactions on Plasma Science | 1986年 / PS-14卷 / 02期

关键词：

ELECTRIC DISCHARGES - Electronic Properties - OXYGEN - PLASMAS - Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Time-dependent Boltzmann electron distribution calculations have been made at constant power and pressure in a SF//6/O//2 plasma with a varying oxygen mole fraction. The results show that as the oxygen fraction increases in a SF//6/O//2 plasma, the number of high-energy electrons in the tail of the electron distribution and the mean electron energy both increase significantly while the plasma is kept at the same reduced electric field E/N. Rate coefficients have been computed for the electron kinetic processes of these plasmas and merged within a kinetic equilibrium model for the plasma etch process, including neutral gas-phase chemistry, ion chemistry, and surface reactions. Model simulations show good agreement with experimental results for SF//6/O//2 etching of polysilicon and demonstrate that the anisotropic character of dilute SF//6 plasma etching is related to the shift in the electron distribution with increasing oxygen fraction. Ionization rates and ion transport to the surface are shown to be more important.

引用

页码：156 / 164