SYNCHROTRON RADIATION-ASSISTED ETCHING OF SILICON SURFACE.

被引：0
作者：
Hayasaka, Nobuo [1 ]
Hiraya, Atsunari [1 ]
Shobatake, Kosuke [1 ]
机构：
[1] Inst for Molecular Science, Okazaki, Jpn, Inst for Molecular Science, Okazaki, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 07期
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D O I：
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学科分类号：
摘要：
9
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页码：1110 / 1112
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