Growth of Epitaxial ZnSe Films on Semiconductor Substrates.

被引：0

作者：

Ivanov, V.A.

Murav'eva, K.K.

Kalinkin, I.P.

机构：

来源：

Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy | 1976年 / 12卷 / 04期

关键词：

CRYSTALS - Epitaxial Growth;

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摘要：

A study was made of the epitaxial growth of ZnSe films in a semi-closed volume on various orienting substrates in a range of incident flow densities from 6 multiplied by (times) 10**1**5 to 1. 2 multiplied by (times) 10**1**8 cm** minus **2 sec** minus **1. It is shown that the boundary of the transition from the growth of textured films to the growth of single-crystal films may be described by a straight-line equation. The activation energies for the growth of epitaxial ZnSe films on substrates made of fluophlogopite mica, ZnSe, Ge, and GaAs substrates are calculated.

引用

页码：619 / 622