Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures

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[1] David, J.P.R.
[2] Grey, R.
[3] Rees, G.J.
[4] Pabla, A.S.
[5] Sale, T.E.
[6] Woodhead, J.
[7] Sanchez-Rojas, J.L.
[8] Pate, M.A.
[9] Hill, G.
[10] Robson, P.N.
[11] Hogg, R.A.
[12] Fisher, T.A.
[13] Skolnick, M.S.
[14] Whittaker, D.M.
[15] Willcox, A.R.K.
[16] Mowbray, D.J.
来源：
David, J.P.R. | 1600年 / Minerals, Metals & Materials Soc (TMS), Warrendale, PA, United States卷 / 23期
关键词：
Avalanche breakdown voltages - Electric field distribution - Indium gallium arsenide - Leakage currents - Multiple quantum wells - PIN configuration;
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