Nucleation of islands in GaAs molecular beam epitaxy studied by in-situ scanning electron microscopy

被引：0

作者：

机构：

[1] Inoue, N.

[2] Osaka, J.

[3] Homma, Y.

来源：

Inoue, N. | 1600年 / Elsevier Science B.V., Amsterdam, Netherlands卷 / 150期

关键词：

Island - Nucleation kinetics - Two dimensional nucleation;

D O I：

10.1016/0022-0248(95)80190-N

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学科分类号：

摘要：

We studied two-dimensional nucleation of islands in the molecular beam epitaxy (MBE) of GaAs by in-situ scanning electron microscopy and found that the islands do not appear until about 1/3 monolayer is deposited. In contrast to what is expected from the previous simple nucleation and growth model, we observed islands to form continuously.

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