ION-IMPLANTED MAGNETIC BUBBLE MEMORY DEVICES.

被引：0

作者：

Toyooka, T. ^{[1
]}

机构：

[1] Hitachi Ltd, Jpn, Hitachi Ltd, Jpn

来源：

IEEE translation journal on magnetics in Japan | 1988年 / 3卷 / 01期

关键词：

MAGNETIC DEVICES - Bubbles;

D O I：

10.1109/TJMJ.1988.4563638

中图分类号：

学科分类号：

摘要：

High-density magnetic bubble memory devices have been developed by using ion-implanted tracks. Hybrid devices composed of ion-implanted tracks or high-density data storage and permalloy tracks for write and read functions have the advantage of compatibility with permalloy devices in commercial use. The characteristics of junctions connecting the two type of tracks are improved by a novel design in which ion-implanted tracks are superposed on both ends of a corner permalloy pattern. Ion-implanted tracks and conductors also have been used to realize a 4-Mb device. The cache loop method, in which data storage loops are connected with a write/read major line by cache loops, is used to reduce mean access and cycle time of the device.

引用

页码：13 / 21