Plasma-enchanced chemical vapor deposition of silicon nitride

被引：0

作者：

Kobayashi, Ikunori ^{[1
]}

Ogawa, Tetsu ^{[1
]}

Hotta, Sadayoshi ^{[1
]}

机构：

[1] Matsushita Electric Industrial Co, Ltd, Moriguchi, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 2 A期

关键词：

12;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：336 / 342

共 50 条

[31] Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride [J].

Dasgupta, A ;

Chowdhuri, AR ;

Takoudis, CG .

STRUCTURE-PROPERTY RELATIONSHIPS OF OXIDE SURFACES AND INTERFACES II, 2003, 751 :133-138

[32] Chemical vapor deposition of titanium-silicon-nitride films [J].

Smith, PM ;

Custer, JS .

APPLIED PHYSICS LETTERS, 1997, 70 (23) :3116-3118

[33] STUDY OF THE CHEMICAL-COMPOSITION OF SILICON-NITRIDE FILMS OBTAINED BY CHEMICAL VAPOR-DEPOSITION AND PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

OLIVERI, C ;

BAROETTO, F ;

MAGRO, C .

SURFACE & COATINGS TECHNOLOGY, 1991, 45 (1-3) :137-146

[34] VAPOR DEPOSITION OF SILICON NITRIDE [J].

DOO, VY ;

NICHOLS, DR ;

SILVEY, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) :C260-&

[35] HEATING EFFECT IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE [J].

HAN, IK ;

LEE, YJ ;

JO, JH ;

LEE, JI ;

KANG, KN .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1991, 10 (09) :526-528

[36] Stress modulation in silicon nitride layers grown by plasma-enhanced chemical vapor deposition [J].

Koyucuoglu, Ali ;

Ostermay, Ina ;

Krueger, Olaf .

THIN SOLID FILMS, 2025, 825

[37] A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films [J].

Konakov, S. A. ;

Krzhizhanovskaya, V. V. .

3RD INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELING IN PHYSICAL SCIENCES (IC-MSQUARE 2014), 2015, 574

[38] Growth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition [J].

Karabacak, T ;

Zhao, YP ;

Wang, GC ;

Lu, TM .

PHYSICAL REVIEW B, 2002, 66 (07)

[39] Hydrogen assisted remote plasma enhanced chemical vapor deposition of amorphous silicon nitride films [J].

SantosFilho, P ;

Koh, K ;

Stevens, G ;

Lucovsky, G .

DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 :57-62

[40] Effect of silicon impurity on carbon nitride films prepared by microwave plasma chemical vapor deposition [J].

Zhang, YP ;

Gu, YS .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 85 (01) :38-42

← 1 2 3 4 5 →