Plasma-enchanced chemical vapor deposition of silicon nitride

被引：0
作者：
Kobayashi, Ikunori [1 ]
Ogawa, Tetsu [1 ]
Hotta, Sadayoshi [1 ]
机构：
[1] Matsushita Electric Industrial Co, Ltd, Moriguchi, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 2 A期
关键词：
12;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：336 / 342
相关论文
共 50 条
  • [21] Optical properties of silicon nitride films formed by plasma-chemical vapor deposition
    L. A. Vlasukova
    F. F. Komarov
    I. N. Parkhomenko
    O. V. Milchanin
    A. V. Leont’ev
    A. V. Mudryi
    A. K. Togambaeva
    Journal of Applied Spectroscopy, 2013, 80 : 89 - 92
  • [22] Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition
    Li D.-L.
    Feng X.-F.
    Wen Z.-Y.
    Shang Z.-G.
    She Y.
    Optoelectronics Letters, 2016, 12 (4) : 285 - 289
  • [23] MODELING OF SILICON-NITRIDE DEPOSITION BY RF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    MASI, M
    BESANA, G
    CANZI, L
    CARRA, S
    CHEMICAL ENGINEERING SCIENCE, 1994, 49 (05) : 669 - 679
  • [24] Process characterization of plasma enhanced chemical vapor deposition of silicon nitride films with disilane as silicon source
    Nallapati, G
    Ajmera, PK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1077 - 1081
  • [25] SILICON-NITRIDE AND SILICON DIIMIDE GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
    TSU, DV
    LUCOVSKY, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 480 - 485
  • [26] Process characterization of plasma enhanced chemical vapor deposition of silicon nitride films with disilane as silicon source
    Nallapati, G.
    Ajmera, P.K.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (03):
  • [27] Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition
    Matsuoka, M.
    Isotani, S.
    Sucasaire, W.
    Zambom, L. S.
    Ogata, K.
    SURFACE & COATINGS TECHNOLOGY, 2010, 204 (18-19) : 2923 - 2927
  • [28] Forming silicon carbon nitride crystals and silicon carbon nitride nanotubes by microwave plasma-enhanced chemical vapor deposition
    Chang, HL
    Hsu, CM
    Kuo, CT
    APPLIED PHYSICS LETTERS, 2002, 80 (24) : 4638 - 4640
  • [29] Study on thermodynamics and kinetics of chemical vapor deposition of silicon nitride
    Wang, Fuyuan
    Cheng, Laifei
    Liang, Shuhua
    MATERIALS RESEARCH EXPRESS, 2020, 7 (10)
  • [30] Selectivity to silicon nitride in chemical vapor deposition of titanium silicide
    Maa, JS
    Howard, DJ
    He, SS
    Tweet, DJ
    Stecker, L
    Stecker, G
    Hsu, ST
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05): : 2243 - 2247
12345