Bias dependence of ft and fmax in an In0.52Al0.48/N+- In0.53Ga0.4 7As MISFET

被引：0

作者：

del Alamo, Jesus A. ^{[1
]}

Mizutani, Takashi ^{[1
]}

机构：

[1] MIT, Cambridge, MA, USA

来源：

Electron device letters | 1988年 / 9卷 / 12期

关键词：

Microwave Devices--Electric Properties;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Detailed microwave characterization of a recently fabricated In0.52Al0.48As/n+ -In0.53Ga0 .47As MISFET reveals that high values of current-gain cutoff frequency (fT) and unilateral-gain cutoff frequency (fmax) are obtained for a broad range of gate bias voltage values. A significant peak in fT and fmax has also been observed at high gate-source bias values. The peak coincides with the onset of electron accumulation at the heterointerface and is attributed to reduced ionized impurity scattering coupled with reduced drain conductance. This result suggests an improved device structure that optimizes operation in the accumulation regime.

引用

页码：654 / 656