0.98-μm multiple-quantum well tunneling injection laser with 98-GHz intrinsic modulation bandwidth

被引：0

作者：

Zhang, X. ^{[1
]}

Gutierrez-Aitken, A. ^{[1
]}

Klotzkin, D. ^{[1
]}

Bhattacharya, P. ^{[1
]}

Caneau, C. ^{[1
]}

Bhat, Rajaram ^{[1
]}

机构：

[1] Univ of Michigan, Ann Arbor, United States

来源：

IEEE Journal on Selected Topics in Quantum Electronics | 1997年 / 3卷 / 02期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：309 / 314

共 35 条

[21] Lateral current injection (LCI) multiple quantum-well 1.55 μm laser with improved gain uniformity across the active region
Akram, NN
OPTICAL AND QUANTUM ELECTRONICS, 2004, 36 (09) : 827 - 846
[22] PHASE MODULATION CHARACTERISTICS OF 1.5 MU-M STRAINED-LAYER MULTIPLE QUANTUM-WELL LASER-AMPLIFIERS
REICHENBACH, D
ZAH, CE
ANDREADAKIS, N
FAVIRE, FJ
MENOCAL, SG
VODHANEL, R
YIYAN, A
LEE, TP
ELECTRONICS LETTERS, 1990, 26 (22) : 1858 - 1860
[23] Lateral current injection (LCI) multiple quantum-well 1.55 μm laser with improved gain uniformity across the active region
Akram M.N.
Optical and Quantum Electronics, 2004, 36 (9) : 827 - 846
[24] Carrier dynamics in high-speed (f(-3dB)>40GHz) 0.98-mu m multiquantum-well tunneling injection lasers determined from electrical impedance measurements
Klotzkin, D
Zhang, X
Bhattacharya, P
Caneau, C
Bhat, R
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (05) : 578 - 580
[25] HIGH-POWER, 0.98 MU-M, GA0.8IN0.2AS/GAAS/GA0.51IN0.49P MULTIPLE QUANTUM-WELL LASER
MOBARHAN, K
RAZEGHI, M
MARQUEBIELLE, G
VASSILAKI, E
JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) : 4447 - 4448
[26] Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (lambda=1.3 mu m) and InGaAsP/GaAs (lambda=0.8 mu m) laser diodes
Berishev, IE
Gorbachev, AY
Mishournyi, VA
Ilyinskaya, ND
Stankevich, AL
Tarasov, IS
APPLIED PHYSICS LETTERS, 1996, 68 (09) : 1186 - 1188
[27] 15-GHz modulation performance of integrated DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer
Stegmueller, B
Baur, E
Kicherer, M
IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (12) : 1647 - 1649
[28] 1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes
Lei, PH
Lin, CC
Ho, WJ
Wu, MC
Laih, LW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (07) : 1129 - 1135
[29] Effects of non-uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 μm InP-based multiple quantum well laser
Jambunathan, R.
Singh, J.
Journal of Applied Physics, 1996, 80 (12):
[30] Effects of non-uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 mu m InP-based multiple quantum well laser
Jambunathan, R
Singh, J
JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) : 6875 - 6879

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