AlAs-GaAs DOUBLE-HETEROJUNCTION LIGHT-EMITTING DIODES.

被引：0
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作者：
Alferov, Zh.I.
Andreev, V.M.
Garbuzov, D.Z.
Davidyuk, N.Yu.
Larionov, V.R.
Marakhonov, V.M.
Smirnova, E.K.
Shelovanova, G.N.
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来源：
Soviet Physics, Technical Physics (English translation of Zhurnal Tekhnicheskoi Fiziki) | 1975年 / 20卷 / 02期
关键词：
LASERS - Optical Pumping;
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摘要：
Planar light-emitting diodes fabricated from three-layer AlAs-GaAs heterojunction structures are studied. The influence of immersion on the external quantum efficiency and on the power characteristics of diodes operating at 0. 81 mu (300 degree K) is studied. In configurations in which immersion liquids can be used the planar diodes can compete with hemispherical diodes. Without immersion, the maximum external quantum efficiency displayed by the planar diodes whose gallium arsenide substrate has been removed is 5%, when immersed in a liquid with n equals 1. 65 these diodes display efficiencies up to 15. 5%.
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页码：234 / 237
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